Features

SIA810DJ-T1-E3 — MOSFET N-CH 20V 4.5A SC-70-6

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 11.5nC @ 8V  •  Current - Continuous Drain (Id) @ 25° C: 4.5A  •  Input Capacitance (Ciss) @ Vds: 400pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Diode (Isolated)  •  Power - Max: 6.5W  •  Mounting Type: Surface Mount  •  Package / Case: PowerPAK® SC-70-6 Dual  •  Other PartNo: SIA810DJ-T1-E3DKR
Datasheet
  • doc on site vishay.com

Suppliers of «SIA810DJ-T1-E3»

Part NoManufacturerPriceStock
ООО "Интегральные схемы"SIA810DJ-T1-E3from 7 days
AspectSIA810DJ-T1-E3from 7 days
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SIA810DJ-T1-E3 (Package: : DFN; , D/c: : 22+)VISHAY/45000
Digi-ic_SMART PIONEER ElectronicFresh data!SIA810DJ-T1-E3 (MOSFET N-CH 20V 4.5A PPAK SC70-6 Подробнее)Vishay Siliconix161318