Features

SI7136DP-T1-E3 — MOSFET N-CH 20V 30A PPAK 8SOIC

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 78nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 30A  •  Input Capacitance (Ciss) @ Vds: 3380pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 39W  •  Mounting Type: Surface Mount  •  Package / Case: PowerPAK® SO-8  •  Other PartNo: SI7136DP-T1-E3TR
Datasheet
  • doc on site vishay.com

Suppliers of «SI7136DP-T1-E3»

Part NoManufacturerPriceStock
BETTLINK ELECTRONIC LIMITEDFresh data!SI7136DP-T1-E3 (MOSFET N-CH 20V 30A PPAK SO-8 Подробнее)Vishay Siliconix2.148$4217
ООО "Интегральные схемы"SI7136DP-T1-E3from 7 days
AspectSI7136DP-T1-E3from 7 days
EK-KomponentFresh data!SI7136DP-T1-E3Vishay2084
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SI7136DP-T1-E3 (Package: : QFN; , D/c: : 22+)VISHAY/45000
Digi-ic_SMART PIONEER ElectronicFresh data!SI7136DP-T1-E3 (MOSFET N-CH 20V 30A PPAK SO-8 Подробнее)Vishay Siliconix161289