Features

SI5856DC-T1-E3 — MOSFET N-CH 20V 4.4A 1206-8

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 7.5nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 4.4A  •  FET Polarity: N-Channel  •  FET Feature: Diode (Isolated)  •  Power - Max: 1.1W  •  Mounting Type: Surface Mount  •  Package / Case: 1206-8 ChipFET™  •  Other PartNo: SI5856DC-T1-E3TR
Datasheet
  • doc on site vishay.com

Suppliers of «SI5856DC-T1-E3»

Part NoManufacturerPriceStock
Digi-ic_SMART PIONEER ElectronicFresh data!SI5856DC-T1-E3 (MOSFET N-CH 20V 4.4A 1206-8 Подробнее)Vishay Siliconix–161281
IC STOCK TECHNOLOGY LIMITEDSI5856DC-T1-E3 (D/c: : 08+)VISHAY–7014
King-YiKu Optoelectronics Co., Ltd.SI5856DC-T1-E3 (22+; , D/c: : 8014)VISHAY12068$–
Icseek Global LimitedSI5856DC-T1-E3 (Оригинальный и наличный и новый)VISHAY–4325
AspectSI5856DC-T1-E3––from 7 days
EK-KomponentFresh data!SI5856DC-T1-E3Vishay–7566
ООО "Интегральные схемы"SI5856DC-T1-E3––from 7 days
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SI5856DC-T1-E3 (Package: : 1206-8; , D/c: : 22+)VISHAY/–45000
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SI5856DC-T1-E3 (Package: : 1206-8 ChipFET; , D/c: : 22+)Vishay–55000