Features

SI5482DU-T1-E3 — MOSFET N-CH 30V 12A PPAK CHIPFET

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 51nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 12A  •  Input Capacitance (Ciss) @ Vds: 1610pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 31W  •  Mounting Type: Surface Mount  •  Package / Case: PowerPAK® ChipFET Single  •  Other PartNo: SI5482DU-T1-E3DKR
Datasheet
  • doc on site vishay.com

Suppliers of «SI5482DU-T1-E3»

Part NoManufacturerPriceStock
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
SI5482DU-T1-E3 (MOSFET N-CH 30V 12A PPAK Подробнее)Vishay Siliconix161274
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
SI5482DU-T1-E3from 7 days
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
SI5482DU-T1-E3from 7 days