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SI4842BDY-T1-GE3 — MOSFET N-CH 30V 28A 8-SOIC

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 100nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 28A  •  Input Capacitance (Ciss) @ Vds: 3650pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 6.25W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Other PartNo: SI4842BDY-T1-GE3TR
Datasheet

Suppliers of «SI4842BDY-T1-GE3»

Part NoManufacturerPriceStock
IC STOCK TECHNOLOGY LIMITEDSI4842BDY-T1-GE3 (D/c: : 18+)VISHAY7500
Digi-ic_SMART PIONEER ElectronicFresh data!SI4842BDY-T1-GE3 (MOSFET N-CH 30V 28A 8SO Подробнее)Vishay Siliconix139903
BETTLINK ELECTRONIC LIMITEDSI4842BDY-T1-GE3 (MOSFET N-CH 30V 28A 8-SOIC Подробнее)Vishay Siliconix1.2559$18731
ООО "Интегральные схемы"SI4842BDY-T1-GE3from 7 days
AspectSI4842BDY-T1-GE3from 7 days
King-YiKu Optoelectronics Co., Ltd.SI4842BDY-T1-GE3 (22+; , D/c: : 8500)VISHAY8$