Features

SI4686DY-T1-E3 — MOSFET N-CH 30V 18.2A 8-SOIC

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 26nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 18.2A  •  Input Capacitance (Ciss) @ Vds: 1220pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 5.2W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Other PartNo: SI4686DY-T1-E3DKR
Datasheet
  • doc on site vishay.com

Suppliers of «SI4686DY-T1-E3»

Part NoManufacturerPriceStock
ООО "Интегральные схемы"SI4686DY-T1-E3––from 7 days
ООО "Интегральные схемы"SI4686DY-T1-E3..––from 7 days
AspectSI4686DY-T1-E3––from 7 days
AspectSI4686DY-T1-E3..––from 7 days
Delta ElectronicsSI4686DY-T1-E3, Транзистор MOSFET N-CH 30В 18.2А [SOIC-8]–650 RUB6-8 weeks
RYX ELECTRONIC LIMITEDFresh data!SI4686DY-T1-E3 (Package: : SOP8; , D/c: : 10+)Vishay–304
EK-KomponentFresh data!SI4686DY-T1-E3Vishay–10066
EK-KomponentFresh data!SI4686DY-T1-E3..Vishay–2046
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!Si4686DY-T1-E3 (Package: : SOP-8; , D/c: : 22+)VISHAY/–45000
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SI4686DY-T1-E3.. (Package: : SOP-8; , D/c: : 22+)VISHAY/–45000
HK Future Electronic Co.,LtdFresh data!SI4686DY-T1-E3 (D/c: : 18+)VISHAY–40000
IC STOCK TECHNOLOGY LIMITEDSI4686DY-T1-E3 (D/c: : 08+)VISHAY–3968
King-YiKu Optoelectronics Co., Ltd.SI4686DY-T1-E3 (22+; , D/c: : 82403)VISHAY8$–
YUHUA TECHNOLOGYFresh data!SI4686DY-T1-E3 (China HongKong - 3 days; , Package: : SOP-8; , D/c: : 18+)VISHAY–40000
Icseek Global LimitedSI4686DY-T1-E3 (Оригинальный и наличный и новый)VISHAY–5249
Digi-ic_SMART PIONEER ElectronicFresh data!SI4686DY-T1-E3 (MOSFET N-CH 30V 18.2A 8SO Подробнее)Vishay Siliconix–133389
BETTLINK ELECTRONIC LIMITEDFresh data!SI4686DY-T1-E3 (MOSFET N-CH 30V 18.2A 8-SOIC Подробнее)Vishay Siliconix1.206$6719