Features

MUN2213JT1G — TRANS BRT NPN 100MA 50V SC-59

Manufacturer: ON Semiconductor  •  RoHS/pb-free: RoHS   Pb-free  •  Voltage - Collector Emitter Breakdown (Max): 50V  •  Resistor - Base (R1) (Ohms): 47K  •  Resistor - Emitter Base (R2) (Ohms): 47K  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  •  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  •  Current - Collector (Ic) (Max): 100mA  •  Current - Collector Cutoff (Max): 500nA  •  Power - Max: 338mW  •  Transistor Type: NPN - Pre-Biased  •  Mounting Type: Surface Mount  •  Package / Case: SC-59-3, SMT3, SOT-346, TO-236

Suppliers of «MUN2213JT1G»

Part NoManufacturerPriceStock
Icseek Global LimitedMUN2213JT1G (Оригинальный и наличный и новый)ON–4600
Digi-ic_SMART PIONEER ElectronicFresh data!MUN2213JT1G (TRANS PREBIAS NPN 338MW SC59 Подробнее)onsemi–13980
AN-CHIPFresh data!MUN2213JT1G (микросхема интегральная электронная TRANS BRT NPN 100MA 50V SC-59 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)ON Semiconductor–34753
Geefook (shenzhen) Electronic Co., LtdMUN2213JT1G (Подробнее)onsemi0.02$35000
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!MUN2213JT1G (Package: : SOT23; , D/c: : 22+)ON–55000
BETTLINK ELECTRONIC LIMITEDMUN2213JT1G (TRANS PREBIAS NPN 338MW SC59 Подробнее)ON Semiconductor0.2024$73800
ООО "Интегральные схемы"MUN2213JT1G––from 7 days
AspectMUN2213JT1G––from 7 days