Features | Manufacturer: ON Semiconductor • RoHS/pb-free: RoHS Pb-free • Voltage - Collector Emitter Breakdown (Max): 30V • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA • Current - Collector (Ic) (Max): 300mA • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 10mA, 5V • Power - Max: 225mW • Frequency - Transition: 125MHz • Transistor Type: NPN - Darlington • Mounting Type: Surface Mount • Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 |
Datasheet | |
Suppliers of «MMBTA13LT3G» | |
|