Features

IXTT30N60P — MOSFET N-CH 600V 30A TO-268 D3

Manufacturer: IXYS  •  RoHS/pb-free: RoHS   Pb-free  •  Series: PolarHV™  •  Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 82nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 30A  •  Input Capacitance (Ciss) @ Vds: 5050pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 540W  •  Mounting Type: Surface Mount  •  Package / Case: TO-268
Datasheet
  • IXTT 30N60P - PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
  • 99251.pdf on site ixys.com

Suppliers of «IXTT30N60P»

Part NoManufacturerPriceStock
Geefook (shenzhen) Electronic Co., Ltd, ShenZhen
(86) 15220089993, sales@geefook.com
IXTT30N60P (Подробнее)Littelfuse–35000
Icseek Global Limited, ShenZhen
(86755) 83000080（10）, Fax: (86755) 830080（908）, sales5@icseek.net
IXTT30N60P (Оригинальный и наличный и новый)IXYS–8643
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
IXTT30N60P (MOSFET N-CH 600V 30A TO268 Подробнее)IXYS–160123
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
IXTT30N60P (микросхема интегральная электронная MOSFET N-CH 600V 30A TO-268 D3 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)IXYS–30145
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
IXTT30N60P––from 7 days
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
IXTT30N60P––from 7 days