Features

IXFX26N60Q — MOSFET N-CH 600V 26A PLUS 247

Manufacturer: IXYS  •  RoHS/pb-free: RoHS   Pb-free  •  Series: HiPerFET™  •  Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 200nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 26A  •  Input Capacitance (Ciss) @ Vds: 5100pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 360W  •  Mounting Type: Through Hole  •  Package / Case: PLUS 247
Datasheet
  • IXFX26N60Q - HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode
  • 98919.pdf on site ixys.com

Suppliers of «IXFX26N60Q»

Part NoManufacturerPriceStock
Geefook (shenzhen) Electronic Co., Ltd, ShenZhen
(86) 15220089993, sales@geefook.com
IXFX26N60Q (Подробнее)Littelfuse35000
Icseek Global Limited, ShenZhen
(86755) 83000080(10), Fax: (86755) 830080(908), sales5@icseek.net
IXFX26N60Q (Оригинальный и наличный и новый)IXYS8643
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
IXFX26N60Q (MOSFET N-CH 600V 26A PLUS247-3 Подробнее)IXYS160995
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
IXFX26N60Q (микросхема интегральная электронная MOSFET N-CH 600V 26A PLUS 247 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)IXYS30457
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
IXFX26N60Qfrom 7 days
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
IXFX26N60Qfrom 7 days