Features

IXFN27N80Q — MOSFET N-CH 800V 27A SOT-227B

Manufacturer: IXYS  •  RoHS/pb-free: RoHS   Pb-free  •  Series: HiPerFET™  •  Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 800V  •  Gate Charge (Qg) @ Vgs: 170nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 27A  •  Input Capacitance (Ciss) @ Vds: 7600pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 520W  •  Mounting Type: Chassis Mount  •  Package / Case: SOT-227B miniBLOC
Datasheet
  • IXFN27N80Q - HiPerFETTM Power MOSFETs Q-Class Single Die MOSFET N-Channel Enhancement Mode
  • 98813.pdf on site ixys.com

Suppliers of «IXFN27N80Q»

Part NoManufacturerPriceStock
Yee Hing Technology Co., LimitFresh data!IXFN27N80Q2380
AspectIXFN27N80Qfrom 7 days
ООО "Интегральные схемы"IXFN27N80Qfrom 7 days
Geefook (shenzhen) Electronic Co., LtdIXFN27N80Q (Подробнее)Littelfuse35000
Icseek Global LimitedIXFN27N80Q (Оригинальный и наличный и новый)IXYS8643
Digi-ic_SMART PIONEER ElectronicFresh data!IXFN27N80Q (MOSFET N-CH 800V 27A SOT-227B Подробнее)IXYS143846