Features | Manufacturer: IXYS • RoHS/pb-free: RoHS Pb-free • Series: HiPerFET™ • Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V • Drain to Source Voltage (Vdss): 800V • Gate Charge (Qg) @ Vgs: 170nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 27A • Input Capacitance (Ciss) @ Vds: 7600pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 520W • Mounting Type: Chassis Mount • Package / Case: SOT-227B miniBLOC |
Datasheet | - IXFN27N80Q - HiPerFETTM Power MOSFETs Q-Class Single Die MOSFET N-Channel Enhancement Mode
- 98813.pdf on site ixys.com
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