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Features
IRL630L
— MOSFET N-CH 200V 9A TO-262
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Vishay/Siliconix
•
Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V
•
Drain to Source Voltage (Vdss): 200V
•
Gate Charge (Qg) @ Vgs: 40nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 9A
•
Input Capacitance (Ciss) @ Vds: 1100pF @ 25V
•
FET Polarity: N-Channel
•
FET Feature: Logic Level Gate
•
Power - Max: 3.1W
•
Mounting Type: Through Hole
•
Package / Case: I²Pak, TO-262 (3 straight leads + tab)
Datasheet
91303.pdf
on site vishay.com
Cross-reference
IRLI630A, IRLU230A
Technical Specification »
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