Features

IRL3502L — MOSFET N-CH 20V 110A TO-262

Manufacturer: Vishay/Siliconix  •  Series: HEXFET®  •  Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 110A  •  Input Capacitance (Ciss) @ Vds: 4700pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 140W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)  •  Other PartNo: *IRL3502L
Datasheet

Suppliers of «IRL3502L»

Part NoManufacturerPriceStock
HongKong Teyou Huicheng Electronic Technology Limited, ShenZhen
(86) 18938853596, Fax: (0755) 82569815, info3@tyhchk.com
IRL3502L (Package: : TO220; , D/c: : 22+)IR45000
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
IRL3502L (MOSFET N-CH 20V 110A TO262-3 Подробнее)Vishay Siliconix157905
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
IRL3502Lfrom 7 days
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
IRL3502Lfrom 7 days