Features | ![Hide](/static/search/close.gif) Manufacturer: Vishay/Siliconix • Series: HEXFET® • Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V • Drain to Source Voltage (Vdss): 55V • Gate Charge (Qg) @ Vgs: 27nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 30A • Input Capacitance (Ciss) @ Vds: 740pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 48W • Mounting Type: Through Hole • Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) |