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IRFR13N20D — MOSFET N-CH 200V 13A DPAK

Manufacturer: International Rectifier  •  Series: HEXFET®  •  Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 38nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 13A  •  Input Capacitance (Ciss) @ Vds: 830pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 110W  •  Mounting Type: Surface Mount  •  Package / Case: DPak, TO-252 (2 leads+tab), SC-63  •  Other PartNo: *IRFR13N20D
Datasheet
Cross-referenceFQD12N20, STD20N20T4, STD7NS20T4, PSMN130-200D, RFP12N20, RFP12N20   Technical Specification »

   


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    Suppliers of «IRFR13N20D»

    SupplierPart NoManufacturerPriceStock
    ООО "СИРИУС"Транзистор IRFR13N20D53.76$
    Delta ElectronicsMOSFET транзистор IRFR13N20DPBF SP001552110 IRF36.13 RUB6-8 weeks
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    China HongKong - 3 days; , Package: : TO-252; , D/c: : 21+    		INFINEON 5000
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    AVELСOM SPBIRFR13N20DTRPBF
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    bulk: 86.91 RUB    		Срок 8 days, 50
    Delta ElectronicsIRFR13N20DTRLP,Nкан 200В 14А DPak54.6 RUB6-8 weeks
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    King-YiKu Optoelectronics Co., Ltd.IRFR13N20DTRLP
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    MOSFET N-CH 200V 13A DPAK Подробнее    		Infineon Technologies0.6983$64382
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    MOSFET транзистор IRFR13N20DPBF; Полярность: N-Channel; V(br)dss: 200 В; Rds(on): 235 мОм; Qg: 25 нКл; Id: 17 А; Корпус: DPak (TO-252) Подробнее PDF    		Infineon34.16 RUB
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    MOSFET N-канал 200В 14А [D-PAK]; от шт.    		IR Срок 6 days, 0
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    IC STOCK TECHNOLOGY LIMITEDIRFR13N20D FR13N20D
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