Features

IPS06N03LZ G — MOSFET N-CH 25V 50A IPAK

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V  •  Drain to Source Voltage (Vdss): 25V  •  Gate Charge (Qg) @ Vgs: 22nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 50A  •  Input Capacitance (Ciss) @ Vds: 2653pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 83W  •  Mounting Type: Through Hole  •  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)  •  Other PartNo: IPS06N03LZGX, SP000016328

Suppliers of «IPS06N03LZG»

Part NoManufacturerPriceStock
HongKong Teyou Huicheng Electronic Technology Limited, ShenZhen
(86) 18938853596, Fax: (0755) 82569815, info3@tyhchk.com
IPS06N03LZG (Package: : TO251; , D/c: : 22+)Infineon45000
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
IPS06N03LZ G (MOSFET N-CH 25V 50A TO251-3 Подробнее)Infineon Technologies160374
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
IPS06N03LZ G (микросхема интегральная электронная MOSFET N-CH 25V 50A IPAK 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Infineon Technologies (IR)8124
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
IPS06N03LZGfrom 7 days
IPS06N03LZG/INFfrom 7 days
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
IPS06N03LZGfrom 7 days
IPS06N03LZG/INFfrom 7 days