Features
IPB100N06S3L-03
— MOSFET N-CH 55V 100A TO263-3-2
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Infineon Technologies
•
RoHS/pb-free:
RoHS
Pb-free
•
Series: OptiMOS™
•
Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
•
Drain to Source Voltage (Vdss): 55V
•
Gate Charge (Qg) @ Vgs: 550nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 100A
•
Input Capacitance (Ciss) @ Vds: 26240pF @ 25V
•
FET Polarity: N-Channel
•
FET Feature: Logic Level Gate
•
Power - Max: 300W
•
Mounting Type: Surface Mount
•
Package / Case: D²Pak, TO-263 (2 leads + tab)
•
Other PartNo: IPB100N06S3L-03INDKR
Datasheet
IPB100N06S3L-03
- OptiMOS®-T Power-Transistor
IPP_B_I100N06S3L-03_DS_1_1.pdf
on site infineon.com
Suppliers of «IPB100N06S3L03»
All
Russian
World
Part No
Manufacturer
Price
Stock
ASOURCING ELECTRONICS
IPB100N06S3L-03
(В наличии на складе TC в КНР. Доставка РФ в срок от 2 недель; , Package: : #N/A; , D/c: : 2021)
Infineon
–
1000
EK-Komponent
IPB100N06S3L-03
VBsemi
–
1076
Icseek Global Limited
IPB100N06S3L-03
(Оригинальный и наличный и новый)
INF
–
6348
ZEALAN ELECTRONICS (HK) INT'L LIMITED
IPB100N06S3L-03
(Brandneworiginalstock)
INFINEON
–
7000
AN-CHIP
IPB100N06S3L-03
(микросхема интегральная электронная MOSFET N-CH 55V 100A TO263-3-2 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)
Infineon Technologies (IR)
–
7891
IC STOCK TECHNOLOGY LIMITED
IPB100N06S3L-03
(D/c: : 20+)
INENOI
–
8480
HongKong Teyou Huicheng Electronic Technology Limited
IPB100N06S3L-03
(Package: : TO-263; , D/c: : 22+)
Infineon
–
55000
Digi-ic_SMART PIONEER Electronic
IPB100N06S3L-03
(MOSFET N-CH 55V 100A TO263-3-2
Подробнее
)
Infineon Technologies
–
159341
King-YiKu Optoelectronics Co., Ltd.
IPB100N06S3L-03
(22+; , D/c: : 19506)
INFINEON
263$
–
Aspect
IPB100N06S3L03XT
–
–
from 7 days
ООО "Интегральные схемы"
IPB100N06S3L03XT
–
–
from 7 days