Features

HAT2197WP — MOSFET N-CH 30V 35A WPAK

Manufacturer: Renesas Technology America  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 18nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 35A  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 20W  •  Mounting Type: Surface Mount  •  Package / Case: WPAK
Datasheet

Suppliers of «HAT2197WP»

Part NoManufacturerPriceStock
HongKong Teyou Huicheng Electronic Technology Limited, ShenZhen
(86) 18938853596, Fax: (0755) 82569815, info3@tyhchk.com
HAT2197WP-EL (Package: : QFN; , D/c: : 22+)RENESAS/–45000
IC STOCK TECHNOLOGY LIMITED, Changsha
(731) 85241908, Fax: (731) 85241908, claire2022@hkicstock.com
HAT2197WP-EL (D/c: : 05+)RENESAS–2500
HSMELECT TECHNOLOGY CO., LIMITED,
(+86) 19868931206, info@hsmkey.com
HAT2197WP-EL (QFN; , D/c: : 05+)RENESAS–2500
King-YiKu Optoelectronics Co., Ltd., ShenZhen
(86) 18819033453, vladimir@kingyiku.com
HAT2197WP-EL (22+; , D/c: : 3500)RENESAS––
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
HAT2197WP––from 7 days
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
HAT2197WP––from 7 days