Features

HAT2165N — MOSFET N-CH 30V 55A LFPAKI

Manufacturer: Renesas Technology America  •  Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 55A  •  Input Capacitance (Ciss) @ Vds: 5180pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 30W  •  Mounting Type: Surface Mount  •  Package / Case: LFPAK-i
Datasheet

Suppliers of «HAT2165N»

Part NoManufacturerPriceStock
Geefook (shenzhen) Electronic Co., Ltd, ShenZhen
(86) 15220089993, sales@geefook.com
HAT2165N-EL-E (Подробнее)Intersil (Renesas Electronics Corporation)1.91$2365
BETTLINK ELECTRONIC LIMITED, Hong Kong
(852) 8191 1802, info@bettlink.com
HAT2165N-EL-E (POWER, 55A, 30V, N-CH MOSFET Подробнее)Rochester Electronics, LLC1.863$2559
Icseek Global Limited, ShenZhen
(86755) 83000080(10), Fax: (86755) 830080(908), sales5@icseek.net
HAT2165N-EL-E (Оригинальный и наличный и новый)RENESAS8200
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
HAT2165N-EL-E (MOSFET N-CH 30V 55A 8LFPAK Подробнее)Renesas Electronics America Inc137826
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
HAT2165N (микросхема интегральная электронная MOSFET N-CH 30V 55A LFPAKI 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Renesas Electronics America37562
HAT2165N-EL-E (микросхема интегральная электронная MOSFET N-CH 30V 55A LFPAKI 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Renesas Electronics America37563
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
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Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
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