Features

FQB19N10TM — MOSFET N-CH 100V 19A D2PAK

Manufacturer: Fairchild Semiconductor  •  RoHS/pb-free: RoHS   Pb-free  •  Series: QFET™  •  Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 25nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 19A  •  Input Capacitance (Ciss) @ Vds: 780pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 3.75W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)
Datasheet

Suppliers of «FQB19N10TM»

Part NoManufacturerPriceStock
Geefook (shenzhen) Electronic Co., LtdFQB19N10TM (Подробнее)onsemi35000
Digi-ic_SMART PIONEER ElectronicFresh data!FQB19N10TM (MOSFET N-CH 100V 19A D2PAK Подробнее)onsemi159786
IC STOCK TECHNOLOGY LIMITEDFQB19N10TM (D/c: : 0801+)FAIRCHILDПЙН8800
EK-KomponentFresh data!FQB19N10TMFairchild Semiconductor5866
Icseek Global LimitedFQB19N10TM (Оригинальный и наличный и новый)FAIRCHILD5100
King-YiKu Optoelectronics Co., Ltd.FQB19N10TM (22+; , D/c: : 9800)FAIRCHILD2632$
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!FQB19N10TM (Package: : TO-263(D2PAK); , D/c: : 22+)FAIRCHILD/55000
AspectFQB19N10TMfrom 7 days
ООО "Интегральные схемы"FQB19N10TMfrom 7 days