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BSS123LT1 — MOSFET N-CH 100V 170MA SOT-23

Manufacturer: ON Semiconductor  •  Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Current - Continuous Drain (Id) @ 25° C: 170mA  •  Input Capacitance (Ciss) @ Vds: 20pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 225mW  •  Mounting Type: Surface Mount  •  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3  •  Other PartNo: BSS123LT1OSCT
Datasheet
Cross-referenceBSS123, BSS123   Technical Specification »

   


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    Suppliers of «BSS123LT1»

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