Features

BSP322P L6327 — MOSFET P-CH 100V 1A SOT-223

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 800 mOhm @ 1A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 16.5nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 1A  •  Input Capacitance (Ciss) @ Vds: 372pF @ 25V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.8W  •  Mounting Type: Surface Mount  •  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA  •  Other PartNo: SP000212229
Datasheet

Suppliers of «BSP322P L6327»

Part NoManufacturerPriceStock
Icseek Global Limited, ShenZhen
(86755) 83000080（10）, Fax: (86755) 830080（908）, sales5@icseek.net
BSP322PL6327 (Оригинальный и наличный и новый)INFINEON–6413
BSP322P L6327 (Оригинальный и наличный и новый)INFINEON–6413
BSP322PL6327HTSA1 (Оригинальный и наличный и новый)INFINEON–6413
EK-Komponent, Moscow
+7 (495) 84951425030, ek-komponent@mail.ru
BSP322PL6327Infineon Technologies AG–8916
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
BSP322PL6327 (P-CHANNEL MOSFET Подробнее)Infineon Technologies–134979
BSP322PL6327HTSA1 (MOSFET P-CH 100V 1A SOT223-4 Подробнее)Infineon Technologies–134713
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
BSP322P L6327 (микросхема интегральная электронная MOSFET P-CH 100V 1A SOT-223 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Infineon Technologies (IR)–8366
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
BSP322P L6327––from 7 days
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
BSP322P L6327––from 7 days