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APTM10DHM09TG — MOSFET MOD ASYMMETRIC BRIDGE SP4

Manufacturer: Microsemi-PPG  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 350nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 139A  •  Input Capacitance (Ciss) @ Vds: 9875pF @ 25V  •  FET Polarity: 2 N-Channel (Asymmetrical Bridge)  •  FET Feature: Standard  •  Power - Max: 390W  •  Mounting Type: Chassis Mount  •  Package / Case: SP4 Module
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Suppliers of «APTM10DHM09TG»

SupplierPart NoManufacturerPriceStock
Geefook (shenzhen) Electronic Co., LtdAPTM10DHM09TG
Подробнее
Microsemi 35000
Digi-ic_SMART PIONEER ElectronicFresh data!APTM10DHM09TG
MOSFET 2N-CH 100V 139A SP4 Подробнее
Microsemi Corporation 168913
ООО "Интегральные схемы"APTM10DHM09TG from 7 days
AspectAPTM10DHM09TG from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
Geefook (shenzhen) Electronic Co., LtdShenZhen(86) 152200899930  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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