Features | Manufacturer: Toshiba • RoHS/pb-free: RoHS Pb-free • Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V • Drain to Source Voltage (Vdss): 600V • Gate Charge (Qg) @ Vgs: 28nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 10A • Input Capacitance (Ciss) @ Vds: 1200pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 80W • Mounting Type: Through Hole • Package / Case: 2-10S1B |