Features

2SK3288ENTL — MOSFET N-CH 30V .1A MPAK

Manufacturer: Renesas Technology America  •  Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 50mA, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Current - Continuous Drain (Id) @ 25° C: 100mA  •  Input Capacitance (Ciss) @ Vds: 3pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 400mW  •  Mounting Type: Surface Mount  •  Package / Case: MPAK
Datasheet

Suppliers of «2SK3288ENTL»

Part NoManufacturerPriceStock
Geefook (shenzhen) Electronic Co., Ltd, ShenZhen
(86) 15220089993, sales@geefook.com
2SK3288ENTL-E (Подробнее)Intersil (Renesas Electronics Corporation)0.1$45000
Icseek Global Limited, ShenZhen
(86755) 83000080(10), Fax: (86755) 830080(908), sales5@icseek.net
2SK3288ENTL-E (Оригинальный и наличный и новый)RENESAS9853
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
2SK3288ENTL-E (N-CHANNEL MOSFET Подробнее)Renesas Electronics America Inc134373
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
2SK3288ENTL (микросхема интегральная электронная MOSFET N-CH 30V .1A MPAK 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Renesas Electronics America35925
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
2SK3288ENTLfrom 7 days
2SK3288ENTL/ENfrom 7 days
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
2SK3288ENTLfrom 7 days
2SK3288ENTL/ENfrom 7 days