Features | ![Hide](/static/search/close.gif) Manufacturer: Toshiba • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V • Drain to Source Voltage (Vdss): 30V • Gate Charge (Qg) @ Vgs: 66nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 60A • Input Capacitance (Ciss) @ Vds: 2300pF @ 10V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 150W • Mounting Type: Through Hole • Package / Case: 2-16C1B (TO-247 N) |