Features | Manufacturer: Toshiba • Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V • Drain to Source Voltage (Vdss): 500V • Gate Charge (Qg) @ Vgs: 58nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 14A • Input Capacitance (Ciss) @ Vds: 2600pF @ 10V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 80W • Mounting Type: Through Hole • Package / Case: 2-16F1B |
Datasheet | - 2SK2916 - N Channel Mos Type (high Speed, High Voltage Switching, Dc-dc Converter, Relay Drive and Motor Drive Applications) • MOSFET
- 3184.pdf on site toshiba.com
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