Features | Manufacturer: Toshiba • RoHS/pb-free: RoHS Pb-free • Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V • Drain to Source Voltage (Vdss): 600V • Gate Charge (Qg) @ Vgs: 30nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 6A • Input Capacitance (Ciss) @ Vds: 1300pF @ 10V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 65W • Mounting Type: Through Hole • Package / Case: 2-10S1B |
Datasheet | |
Suppliers of «2SK2777(SM,Q)» | |
Part No | Manufacturer | Price | Stock | ООО "Интегральные схемы", St. Petersburg +7 (812) 448-53-82, info@ic-ltd.ru | | 2SK2777(SM,Q) | – | – | from 7 days | Aspect, St. Petersburg +7 (812) 309-89-32, info@aspect.spb.su | | 2SK2777(SM,Q) | – | – | from 7 days |
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