Features | Manufacturer: Toshiba • RoHS/pb-free: RoHS Pb-free • Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V • Drain to Source Voltage (Vdss): 60V • Gate Charge (Qg) @ Vgs: 110nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 50A • Input Capacitance (Ciss) @ Vds: 3550pF @ 10V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 125W • Mounting Type: Through Hole • Package / Case: 2-16C1B (TO-247 N) |