Features | Manufacturer: Toshiba • Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V • Drain to Source Voltage (Vdss): 1000V (1kV) • Gate Charge (Qg) @ Vgs: 60nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 5A • Input Capacitance (Ciss) @ Vds: 700pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 125W • Mounting Type: Through Hole • Package / Case: 2-16C1B (TO-247 N) |
Datasheet | |
Cross-reference | STW5NK100Z, IRFPG40, BUZ310, BUZ311, IRFPG30, IRFPG40, IRFPG42, STHV102, STHV102FI, STW5NB100 Technical Specification » |
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