Manufacturer: International Rectifier  •  Series: HEXFET®  •  Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 110A, 10V  •  Drain to Source Voltage (Vdss): 40V  •  Gate Charge (Qg) @ Vgs: 140nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 185A  •  Input Capacitance (Ciss) @ Vds: 7660pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 300W  •  Mounting Type: Surface Mount  •  Package / Case: Super D2-Pak