Manufacturer: Toshiba  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 19A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 50nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 38A  •  Input Capacitance (Ciss) @ Vds: 4600pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 45W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC