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SIB417DK-T1-GE3 — MOSFET P-CH 8V 9A SC75-6

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 52 mOhm @ 5.6A, 4.5V  •  Drain to Source Voltage (Vdss): 8V  •  Gate Charge (Qg) @ Vgs: 12.75nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 9A  •  Input Capacitance (Ciss) @ Vds: 675pF @ 4V  •  FET Polarity: P-Channel  •  FET Feature: Standard  •  Power - Max: 13W  •  Mounting Type: Surface Mount  •  Package / Case: PowerPAK® SC-75-6L  •  Other PartNo: SIB417DK-T1-GE3TR
Datasheet

   


Suppliers of «SIB417DK-T1-GE3»

SupplierPart NoManufacturerPriceStock
Digi-ic_SMART PIONEER ElectronicFresh data!SIB417DK-T1-GE3
MOSFET P-CH 8V 9A PPAK SC75-6 Подробнее
Vishay Siliconix 162019
ООО "Интегральные схемы"SIB417DK-T1-GE3 from 7 days
AspectSIB417DK-T1-GE3 from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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