Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V  •  Drain to Source Voltage (Vdss): 250V  •  Gate Charge (Qg) @ Vgs: 21nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 1.24A  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.5W  •  Mounting Type: Surface Mount  •  Package / Case: PowerPAK® 1212-8  •  Other PartNo: SI7802DN-T1-E3CT