Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.2A, 10V  •  Drain to Source Voltage (Vdss): 40V  •  Gate Charge (Qg) @ Vgs: 12nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 3.9A  •  Input Capacitance (Ciss) @ Vds: 700pF @ 20V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.1W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Other PartNo: SI4446DY-T1-E3DKR