Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.2A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 35nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 4.7A  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.14W  •  Mounting Type: Surface Mount  •  Package / Case: 6-TSOP  •  Other PartNo: SI3483DV-T1-E3CT