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SI1058X-T1-E3 — MOSFET N-CH 20V 1.3A SOT563F

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 5.9nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 1.3A  •  Input Capacitance (Ciss) @ Vds: 380pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 236mW  •  Mounting Type: Surface Mount  •  Package / Case: SC-89-6, SOT-563F, SOT-666  •  Other PartNo: SI1058X-T1-E3CT
Datasheet
  • doc on site vishay.com

   


Suppliers of «SI1058X-T1-E3»

SupplierPart NoManufacturerPriceStock
Digi-ic_SMART PIONEER ElectronicFresh data!SI1058X-T1-E3
MOSFET N-CH 20V 1.3A SC89-6 Подробнее
Vishay Siliconix 161180
AspectSI1058X-T1-E3 from 7 days
ООО "Интегральные схемы"SI1058X-T1-E3 from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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