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HAT2208WP — MOSFET N-CH 30V 12A WPAK

Manufacturer: Renesas Technology America  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 1.4nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 12A  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 5W  •  Mounting Type: Surface Mount  •  Package / Case: WPAK
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Suppliers of «HAT2208WP»

SupplierPart NoManufacturerPriceStock
KontestHAT2208WP
MOSFET N-CH 30V 12A WPAK Подробнее		Renesas Electronics America
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!HAT2208WP
Package: : QFN8; , D/c: : 22+		 45000
AspectHAT2208WP from 7 days
ООО "Интегральные схемы"HAT2208WP from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
HongKong Teyou Huicheng Electronic Technology LimitedShenZhen(86) 18938853596, Fax: (0755) 825698150  0 Hide
KontestMoscow+7 (495) 150-88-73, Fax: (495) 150-88-736  27 Hide
Voronez+7 (473) 239-22-32
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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Distributors: 2172 Russian and 779 worldwide
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