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BSS192PE6327T — MOSFET P-CH 250V 190MA SOT-89

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V  •  Drain to Source Voltage (Vdss): 250V  •  Gate Charge (Qg) @ Vgs: 6.1nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 190mA  •  Input Capacitance (Ciss) @ Vds: 104pF @ 25V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1W  •  Mounting Type: Surface Mount  •  Package / Case: SOT-89  •  Other PartNo: BSS192PE6327XTINTR
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Suppliers of «BSS192PE6327T»

SupplierPart NoManufacturerPriceStock
Icseek Global LimitedBSS192PE6327T
Оригинальный и наличный и новый
INFINEON 6413
AN-CHIPFresh data!BSS192PE6327T
микросхема интегральная электронная MOSFET P-CH 250V 190MA SOT-89 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21
Infineon Technologies (IR) 7925
Digi-ic_SMART PIONEER ElectronicFresh data!BSS192PE6327T
MOSFET P-CH 250V 190MA SOT89 Подробнее
Infineon Technologies 160018
AspectBSS192PE6327T from 7 days
ООО "Интегральные схемы"BSS192PE6327T from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
Icseek Global LimitedShenZhen(86755) 83000080(10), Fax: (86755) 830080(908)0  0 Hide
AN-CHIPSt. Petersburg+7 (812) 922-25-390  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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