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BSP295E6327T — MOSFET N-CH 60V 1.8A SOT223

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 17nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 1.8A  •  Input Capacitance (Ciss) @ Vds: 368pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.8W  •  Mounting Type: Surface Mount  •  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA  •  Other PartNo: BSP295XTINTR, SP000011105
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Suppliers of «BSP295E6327T»

SupplierPart NoManufacturerPriceStock
AN-CHIPFresh data!BSP295E6327T
микросхема интегральная электронная MOSFET N-CH 60V 1.8A SOT223 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21
Infineon Technologies (IR) 7920
Digi-ic_SMART PIONEER ElectronicFresh data!BSP295E6327T
MOSFET N-CH 60V 1.8A SOT223-4 Подробнее
Infineon Technologies 160014
Icseek Global LimitedBSP295E6327T
Оригинальный и наличный и новый
INFINEON 6413
ООО "Интегральные схемы"BSP295E6327T from 7 days
AspectBSP295E6327T from 7 days


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CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
Icseek Global LimitedShenZhen(86755) 83000080(10), Fax: (86755) 830080(908)0  0 Hide
AN-CHIPSt. Petersburg+7 (812) 922-25-390  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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