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APTM10HM09FT3G — MOSFET MODULE FULL BRIDGE SP3

Manufacturer: Microsemi-PPG  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 350nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 139A  •  Input Capacitance (Ciss) @ Vds: 9875pF @ 25V  •  FET Polarity: 4 N-Channel (H-Bridge)  •  FET Feature: Standard  •  Power - Max: 390W  •  Mounting Type: Chassis Mount  •  Package / Case: SP3
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Suppliers of «APTM10HM09FT3G»

SupplierPart NoManufacturerPriceStock
ООО "Интегральные схемы"APTM10HM09FT3G from 7 days
AspectAPTM10HM09FT3G from 7 days
Digi-ic_SMART PIONEER ElectronicFresh data!APTM10HM09FT3G
MOSFET 4N-CH 100V 139A SP3 Подробнее
Microchip Technology 168598
Icseek Global LimitedAPTM10HM09FT3G
Оригинальный и наличный и новый
MICROCHIP 9853
Geefook (shenzhen) Electronic Co., LtdAPTM10HM09FT3G
Подробнее
Microchip Technology151.7613$35000


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
Geefook (shenzhen) Electronic Co., LtdShenZhen(86) 152200899930  0 Hide
Icseek Global LimitedShenZhen(86755) 83000080(10), Fax: (86755) 830080(908)0  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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