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2SK3562(Q) — MOSFET N-CH 600V 6A TO-220SIS

Manufacturer: Toshiba  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 28nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 6A  •  Input Capacitance (Ciss) @ Vds: 1050pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 40W  •  Mounting Type: Through Hole  •  Package / Case: TO-220 (SIS)  •  Other PartNo: 2SK3562Q
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Suppliers of «2SK3562(Q)»

SupplierPart NoManufacturerPriceStock
Icseek Global Limited2SK3562(Q,M)
Оригинальный и наличный и новый
TOS 9853
ООО "Интегральные схемы"2SK3562(Q) from 7 days
Aspect2SK3562(Q) from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
Icseek Global LimitedShenZhen(86755) 83000080(10), Fax: (86755) 830080(908)0  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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