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2SK2602(F,T)
— MOSFET N-CH 600V 6A 2-16C1B
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Toshiba
•
RoHS/pb-free:
RoHS
Pb-free
•
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
•
Drain to Source Voltage (Vdss): 600V
•
Gate Charge (Qg) @ Vgs: 30nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 6A
•
Input Capacitance (Ciss) @ Vds: 1300pF @ 10V
•
FET Polarity: N-Channel
•
FET Feature: Logic Level Gate
•
Power - Max: 125W
•
Mounting Type: Through Hole
•
Package / Case: 2-16C1B (TO-247 N)
Datasheet
3078.pdf
on site toshiba.com
Part Numbers
2SK2602(F T)
R574482885
Manufacturers
Radiall USA, Inc.
TOS
TOSHIBA
Location
China
Russia
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ООО "Интегральные схемы"
2SK2602(F,T)
from 7 days
Aspect
2SK2602(F,T)
from 7 days
Icseek Global Limited
2SK2602(F,T)
Оригинальный и наличный и новый
TOS
9853
EK-Komponent
2SK2602F,T
TOSHIBA
1043
Digi-ic_SMART PIONEER Electronic
R574482885
SP8T TERMINATED RAMSES SMA 18GHZ
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Radiall USA, Inc.
64026
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Digi-ic_SMART PIONEER Electronic
Hong Kong
(86) 13512338801
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(86) 0755-82535750
Icseek Global Limited
ShenZhen
(86755) 83000080(10), Fax: (86755) 830080(908)
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St. Petersburg
+7 (812) 309-89-32
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EK-Komponent
Moscow
+7 (495) 84951425030
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ООО "Интегральные схемы"
St. Petersburg
+7 (812) 448-53-82
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