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2SJ464(F)
— MOSFET P-CH 100V 18A TO-220NIS
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Toshiba
•
RoHS/pb-free:
RoHS
Pb-free
•
Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V
•
Drain to Source Voltage (Vdss): 100V
•
Gate Charge (Qg) @ Vgs: 140nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 18A
•
Input Capacitance (Ciss) @ Vds: 2900pF @ 10V
•
FET Polarity: P-Channel
•
FET Feature: Logic Level Gate
•
Power - Max: 45W
•
Mounting Type: Through Hole
•
Package / Case: 2-10R1B
Datasheet
2956.pdf
on site toshiba.com
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