CM600HU-12F - Trench Gate Design Single IGBTMODTM 600 Amperes / 600 Volts
Powerex • 104Kb • 4 pg.CM75DU-12F - Trench Gate Design Dual IGBTMODTM 75 Amperes / 600 Volts
Powerex • 367.66Kb • 4 pg. • IGBT ModulesCM75TU-12F - Trench Gate Design Six IGBTMODTM 75 Amperes / 600 Volts
Powerex • 128.53Kb • 4 pg.CM100DU-12F - Trench Gate Design Dual IGBTMODTM 100 Amperes / 600 Volts
Powerex • 107.93Kb • 4 pg. • IGBT ModulesCM100TJ-12F - Trench Gate Design Six IGBTMODTM 100 Amperes / 600 Volts
Powerex • 101.81Kb • 4 pg. • IGBT ModulesCM100TU-12F - Trench Gate Design Six IGBTMODTM 100 Amperes / 600 Volts
Powerex • 130.2Kb • 4 pg.CM150DU-12F - Trench Gate Design Dual IGBTMODTM 150 Amperes / 600 Volts
Powerex • 338.99Kb • 4 pg. • IGBT ModulesCM150TJ-12F - Trench Gate Design Six IGBTMODTM 150 Amperes / 600 Volts
Powerex • 72.11Kb • 4 pg. • IGBT ModulesCM150TU-12F - Trench Gate Design Six IGBTMODTM 150 Amperes / 600 Volts
Powerex • 137.34Kb • 4 pg.CM200DU-12F - Trench Gate Design Dual IGBTMODTM 200 Amperes / 600 Volts
Powerex • 109.45Kb • 4 pg. • IGBT ModulesCM200TU-12F - Trench Gate Design Six IGBTMODTM 200 Amperes / 600 Volts
Powerex • 130.65Kb • 4 pg.VMB40-12F - NPN SILICON RF POWER TRANSISTOR
ASI • 21.31Kb • 1 pg. • RF Bipolar TransistorsHF10-12F - Npn Silicon Rf Power Transistor
ASI • 21.46Kb • 1 pg. • RF Bipolar TransistorsCM100DUS-12F - High Power Switching Use
Mitsubishi • 137.68Kb • 2 pg. • IGBT Modules12F - Standard Recovery Diodes Stud Version
IRF • 71.29Kb • 6 pg. • Schottky Barrier RectifiersVHB40-12F - NPN SILICON RF POWER TRANSISTOR
ASI • 21.43Kb • 1 pg. • Bipolar TransistorsVLB40-12F - NPN SILICON RF POWER TRANSISTOR
ASI • 21.19Kb • 1 pg. • Bipolar TransistorsVLB70-12F - NPN SILICON RF POWER TRANSISTOR
ASI • 21.29Kb • 1 pg. • Bipolar TransistorsHF5-12F - NPN SILICON RF POWER TRANSISTOR
ASI • 21.49Kb • 1 pg. • Bipolar Transistors
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