1
S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
=30V : R
DS
(
on
)=0.025 ; I
D
= 8.9A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
·
Low on-resistance
·
Fast switching speed
·
Low threshold
·
Low gate drive
·
Low profile SOIC package
APPLICATIONS
·
DC - DC converters
·
Power management functions
·
Disconnect switches
·
Motor control
DEVICE MARKING
·
ZXMN
3B04
ZXMN3B04N8
ISSUE 2 - MAY 2004
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3B04N8TA
7"
12mm
500 units
ZXMN3B04N8TC
13"
12mm
2500 units
ORDERING INFORMATION
Top View
SO8
ZXMN3B04N8
S E M I C O N D U C T O R S
ISSUE 2 - MAY 2004
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
62.5
°C/W
Junction to ambient
(b)
R
JA
41.4
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V
DSS
30
V
Gate source voltage
V
GS
12
V
Continuous drain current
@ V
GS
=4.5V; T
A
=25°C
(b)
@ V
GS
=4.5V; T
A
=70°C
(b)
@ V
GS
=4.5V; T
A
=25°C
(a)
I
D
8.9
7.3
7.2
A
A
A
Pulsed drain current
(c)
I
DM
45
A
Continuous source current (body diode)
(b)
I
S
4.5
A
Pulsed source current (body diode)
(c)
I
SM
45
A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
2
16
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
3
24
W
mW/°C
Operating and storage temperature range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
ZXMN3B04N8
S E M I C O N D U C T O R S
ISSUE 2 - MAY 2004
3
CHARACTERISTICS
ZXMN3B04N8
S E M I C O N D U C T O R S
ISSUE 2 - MAY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
(BR)DSS
30
V
I
D
=250 A, V
GS
=0V
Zero gate voltage drain current
I
DSS
0.5
A
V
DS
=30V, V
GS
=0V
Gate-body leakage
I
GSS
100
nA
V
GS
=
12V, V
DS
=0V
Gate-source threshold voltage
V
GS(th)
0.7
V
I
D
=250 A, V
DS
= V
GS
Static drain-source on-state
resistance
(1)
R
DS(on)
0.021
0.028
0.025
0.040
V
GS
=4.5V, I
D
=7.2A
V
GS
=2.5V, I
D
=5.7A
Forward transconductance
(1) (3)
g
fs
24
S
V
DS
=15V,I
D
=7.2A
DYNAMIC
(3)
Input capacitance
C
iss
2480
pF
V
DS
=15V, V
GS
=0V,
f=1MHz
Output capacitance
C
oss
318
pF
Reverse transfer capacitance
C
rss
184
pF
SWITCHING
(2) (3)
Turn-on delay time
t
d(on)
9
ns
V
DD
=15V, V
GS
=4.5V
I
D
=1A
R
G
6.0 ,
Rise time
t
r
11.5
ns
Turn-off delay time
t
d(off)
40
ns
Fall time
t
f
16.6
ns
Total gate charge
Q
g
23.1
nC
V
DS
=15V,V
GS
=4.5V,
I
D
=7.2A
Gate-source charge
Q
gs
4.9
nC
Gate-drain charge
Q
gd
6.2
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
SD
0.85
0.95
V
T
J
=25°C, I
S
=8A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
17.9
ns
T
J
=25°C, I
F
=3.2A,
di/dt= 100A/ s
Reverse recovery charge
(3)
Q
rr
10
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3B04N8
S E M I C O N D U C T O R S
ISSUE 2 - MAY 2004
5
TYPICAL CHARACTERISTICS
PDF 
ZIP