P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 450 Volt V
DS
* R
DS(on)
=150
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-450
V
Continuous Drain Current at T
amb
=25°C
I
D
-45
mA
Pulsed Drain Current
I
DM
-400
mA
Gate Source Voltage
V
GS
±
20
V
Power Dissipation at T
amb
=25°C
P
tot
700
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-450
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-4.5
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-20
-2
µ
A
mA
V
DS
=-450 V, V
GS
=0
V
DS
=-360 V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current(1)
I
D(on)
-100
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source
On-State Resistance (1)
R
DS(on)
150
V
GS
=-10V,I
D
=-50mA
Forward Transconductance
(1)(2)
g
fs
40
mS
V
DS
=-25V,I
D
=-50mA
Input Capacitance (2)
C
iss
120
pF
Common Source Output
Capacitance (2)
C
oss
20
pF
V
DS
=-25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Delay Time (2)(3)
t
d(on)
10
ns
V
DD
-25V, I
D
=-50mA
Rise Time (2)(3)
t
r
15
ns
Turn-Off Delay Time (2)(3)
t
d(off)
15
ns
Fall Time (2)(3)
t
f
20
ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
2%
(2) Sample test.
(
3
E-Line
TO92 Compatible
ZVP0545A
3-413
D
G
S
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