N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
*
100 Volt V
DS
*
R
DS(on)
=3
*
Low threshold voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
100
V
Continuous Drain Current at T
amb
=25°C
I
D
320
mA
Pulsed Drain Current
I
DM
6
A
Gate Source Voltage
V
GS
±
20
V
Power Dissipation at T
amb
=25°C
P
tot
700
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
100
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.75
1.5
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
500
µ
A
µ
A
V
DS
=100 V, V
GS
=0
V
DS
=80 V, V
GS
=0V, T=125°C
(2)
On-State Drain Current(1)
I
D(on)
750
mA
V
DS
=25 V, V
GS
=5V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
4.5
3.0
V
GS
=5V,I
D
=250mA
V
GS
=10V, I
D
=500mA
Forward Transconductance
(1)(2)
g
fs
225
mS
V
DS
=25V,I
D
=500mA
Input Capacitance (2)
C
iss
75
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
25V, V
GS
=10V, I
D
=1A
Rise Time (2)(3)
t
r
12
ns
Turn-Off Delay Time (2)(3)
t
d(off)
15
ns
Fall Time (2)(3)
t
f
13
ns
E-Line
TO92 Compatible
ZVNL110A
3-400
D
G
S
PDF 
ZIP