PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
*
V
CEO
= -12V
*
5 Amp Continuous Current
*
20 Amp Pulse Current
*
Low Saturation Voltage
*
High Gain
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-20
A
Continuous Collector Current
I
C
-5
A
Base Current
I
B
-500
mA
Power Dissipation at T
amb
=25°C
P
tot
2.5
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
°C
The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches by 2 inches
FZT1147A
C
C
E
B
SOT223
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-15
-35
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
CES
-12
-25
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
CEO
-12
-25
V
I
C
=-10mA *
Collector-Emitter
Breakdown Voltage
V
CEV
-12
-25
V
I
C
=-100
µ
A, V
EB
=+1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
-8.5
V
I
E
=-100
µ
A
Collector Cut-Off Current
I
CBO
-0.3
-100
nA
V
CB
=-12V
Emitter Cut-Off Current
I
EBO
-0.3
-100
nA
V
EB
=-4V
Collector Emitter Cut-Off
Current
I
CES
-0.3
-100
nA
V
CE
=-10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-25
-70
-90
-115
-250
-50
-110
-130
-170
-400
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-6mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-950
-1050
mV
I
C
=-5A, I
B
=-50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-905
-1000
mV
I
C
=-5A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
270
250
200
150
90
450
400
340
245
145
50
850
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
I
C
=-20A, V
CE
=-2V*
Transition Frequency
f
T
115
MHz
I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
cb
80
pF
VCB=-10V, f=1MHz
Switching Times
t
on
150
ns
I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
t
off
220
ns
I
C
=-4A, I
B
=
±
40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%.
FZT1147A
FZT1147A
SPICE PARAMETERS
* ZETEX FZT1147A Spice model Last revision 10/12/96
*
.MODEL
FZT1147A PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65
+
BF=500 VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6
+
BR=90 VAR=3.1 IKR=1.2 RE=15e-3 RB=145e-3
+
RC=13e-3 CJE=560e-12
+
CJC=255e-12 VJC=0.6288
+
MJC=0.4048 TF=1.2e-9 TR=13e-9
*
©
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC ("Zetex"). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
100µs
Pulse Width
Transient Thermal Resistance
0
Therm
al Resistance
(°C
/W)
D=0.2
D=0.1
D=0.05
D=0.5
Single Pulse
D=t1
tP
t1
tP
1ms
10ms 100ms
1s
10s
100s
Derating curve
Max
Pow
er Dissip
ation
- (W
atts)
0
0
T - Ambient Temperature (°C)
D = 1
10
20
30
40
50
20
40
60
80
100
120
140
160
1
2
3
4
THERMAL CHARACTERISTICS
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