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DRAIN CURRENT

-4.2 AMPERES

DRAIN SOURCE VOLTAGE

-20 VOLTAGE

Features:

*Super High Dense Cell Design For Low R

Applications

*Power Management in Notebook Computer

*Portable Equipment

*Battery Powered System

DS(ON)

<53m @V

=10V

*Rugged and Reliable
*Simple Drive Requirement

*SOT-23 Package

Maximum Ratings

(
(T

nlle

s O

Otth

errw

wiis

e S

ciiffiie

d))

Rating

Symbol

Value

Unit

Drain-Source Voltage

-20

Gate-Source Voltage

±12

Continuous Drain Current

,(T

-4.2

,(T

-3.4

Pulsed Drain Current

1,2

-10

°C

Total Power Dissipation(T

=25°C)

1.38

Maximum Thermal Resistance Junction-ambient

°C/W

Operating Junction and Storage Temperature Range

, T

stg

-55~+150

Device Marking

WTC2305=2305

WTC2305

P-Channel Enhancement

Mode Power MOSFET

GATE

SOURCE

DRAIN

SOT-23

16-May-05

1/6

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Electrical Characteristics

= 25 Unless otherwise noted)

Characteristic

Symbol Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage
V

=0,I

=-250A

(BR)DSS

-20

Gate-Source Threshold Voltage
V

=-250A

GS(Th)

-0.5

Gate-Source Leakage C urrent
V

= ±12V

GSS

±100

-1

Drain- Source Leakage Current(T

=25°C)

=-20V,V

Drain- Source Leakage Current(T

=70°C)

=-16V,V

DSS

-10

Drain-Source On-Resistance

=-10V,I

=-4.5A

=-4.5V,I

=-4.2A

=-2.5V,I

=-2.0A

=-1.8V,I

=-1.0A

DS(o n)

-
-

100

250

Forward Transconductance
V

=-5.0V, I

=-2.8A

Dynamic

Input Capacitance

iss

Output Capacitance

oss

167

740

126

Reverse Transfer Capacitance

=0V,V

=-15V,f=1.0MHz

=0V,V

=-15V,f=1.0MHz

=0V,V

=-15V,f=1.0MHz

rss

2/6

16-May-05

WTC2305

Switching

Turn-on Delay Time

=-15V,V

=-10V,I

=-4.2A,R

=3.6,R

=-15V,V

=-10V,I

=-4.2A,R

=3.6,R

=-15V,V

=-10V,I

=-4.2A,R

=3.6,R

=-15V,V

=-10V,I

=-4.2A,R

=3.6,R

=-16V,V

=-4.5V,I

=-4.2A

=-16V,V

=-4.5V,I

=-4.2A

=-16V,V

=-4.5V,I

=-4.2A

=0,I

=-4.2A,dl/dt=100A/µs

=0,I

=-4.2A,dl/dt=100A/µs

(on)

5.9

Rise Time

3.6

Turn-off Delay Time

(off)

32.4

2.6

Fall Time

Total Gate Charge

Gate-Source Charge

2.32

10.6

3.68

Gate-Drain Change

Source-Drain Diode Characteristics

Forward On Voltage

=0V,I

=-1.2A ,@Tj=25 C

- 1.2

Reverse Recovery Time

Reverse Recovery Charge

27.7

Note: 1. Pulse width limited by Max, junction temperature.

2. pulse width300s, duty cycle2%.
3. Surface mounted on 1 in

copper pad of FR4 board; 270/W when mounted on min, copper pad.

3/6

16-May-05

WEITRON

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WTC2305

WEITRON

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WTC2305

-V

,DRAIN-TO-SOURCE VOLTAGE(V)

I
-

)

A
(

T

N
I

D
,

I
-

)

A
(

t
n
e
r
r
u

C

n
i
a
r

D
,

-V

,Drain-to-source Voltage(V)

FIG.1 Typical Output Characteristics

-V

,Gate-to-source Voltage(V)

)

O
(
S

)

m
(

160

120

0 1 2 3 4 5 6

Fig.3 On-Resistance v.s. Gate Voltage

R

d
e
z
i
l
a

m
r
o

)
n
o
(
s

1.8

1.6

1.4

1.2

1.0

0.8

0.6

-50 0 50 100 150

Fig.4 Normalized On-Resistance

Fig.2 Typical Output Characteristics

= -4.2A

= 25°C

-V

,Source-to-Drain Voltage(V)

I
-

)

A
(

100

0.01

0.1

0 0.4 0.8 1.2 1.6

Fig.5 Forward Characteristics of

Reverse Diode

,Junction Temperature(°C)

V
-

)
h
t
(
S

)

V
(

1.5

0.5

-50 0 50 100 150

Fig.6 Gate Threshold Voltage v.s.

Junction Temperature

= -4.2A

= -4.5V

= 25°C

= 150°C

0 2 4 6 8 10

TA=25°C

4/6

16-May-05

= -5V

= -4V

= -3V

= -2V

0 2 4 6 8

= -5V

= -4V

= -3V

= -2V

TA=150°C

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WTC2305

, Total Gate Charge(nC)

V
-

,

G

a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e
(
V

)

0 5 10 15 20 25

Fig 7. Gate Charge Characteristics

-V

, Drain-to-Source Voltage(V)

I
-

)

A
(

100

0.1

0.01

0.1 1 10 100

Fig 9. Maximum Safe Operation Area

= 25°C

Single Pulse

1ms

10ms

100ms

t, Pulse Width(s)

R
(
e
s
n
o
p
s
e

R

l
a

m
r
e
h
T

d
e
z
i
l
a

m
r
o

)

0.1

0.01

0.001

0.0001 0.001 0.01 0.1

1 10

100 1000

Fig 10. Effective Transient Thermal Impedance

Duty factor = 0.5

-V

, Drain-to-Source Voltage(V)

F
p
(

)

1000

10000

100

1 5 9

13 17 21

25 29

Fig 8. Typical Capacitance Characteristics

f = 1.0MHz

0.2

0.1

0.05

0.01

Single pulse

Duty factor = t / T

Peak Tj=P

x R

+ T

=270°C / W

Crss

Coss

Ciss

5/6

16-May-05

= -16V

= -4.2A

Fig 11. Switching Time Circuit

Fig.12 Gate Charge Circuit

-10V

TO THE

OSCILLOSCOPE

0.75x RATED V

-1~3mA

TO THE

OSCILLOSCOPE

0.8x RATED V

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WTC2305

Dim

Min

0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30

0.076

Max

0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25

TOP VIEW

SOT-23

SOT-23 Outline Dimension

6/6

16-May-05

Part Number WTC2305

Document Outline